Magnetic topological insulator

Topological insulators of magnetic materials

In physics, magnetic topological insulators are three dimensional magnetic materials with a non-trivial topological index protected by a symmetry other than time-reversal.[1][2][3][4][5] This type of material conducts electricity on its outer surface, but its volume behaves like an insulator.[6]

In contrast with a non-magnetic topological insulator, a magnetic topological insulator can have naturally gapped surface states as long as the quantizing symmetry is broken at the surface. These gapped surfaces exhibit a topologically protected half-quantized surface anomalous Hall conductivity ( e 2 / 2 h {\displaystyle e^{2}/2h} ) perpendicular to the surface. The sign of the half-quantized surface anomalous Hall conductivity depends on the specific surface termination.[7]

Theory

Axion coupling

The Z 2 {\displaystyle \mathbb {Z} _{2}} classification of a 3D crystalline topological insulator can be understood in terms of the axion coupling θ {\displaystyle \theta } . A scalar quantity that is determined from the ground state wavefunction[8]

θ = 1 4 π B Z d 3 k ϵ α β γ Tr [ A α β A γ i 2 3 A α A β A γ ] {\displaystyle \theta =-{\frac {1}{4\pi }}\int _{\rm {BZ}}d^{3}k\,\epsilon ^{\alpha \beta \gamma }{\text{Tr}}{\Big [}{\mathcal {A}}_{\alpha }\partial _{\beta }{\mathcal {A}}_{\gamma }-i{\frac {2}{3}}{\mathcal {A}}_{\alpha }{\mathcal {A}}_{\beta }{\mathcal {A}}_{\gamma }{\Big ]}} .

where A α {\displaystyle {\mathcal {A}}_{\alpha }} is a shorthand notation for the Berry connection matrix

A j n m ( k ) = u n k | i k j | u m k {\displaystyle {\mathcal {A}}_{j}^{nm}(\mathbf {k} )=\langle u_{n\mathbf {k} }|i\partial _{k_{j}}|u_{m\mathbf {k} }\rangle } ,

where | u m k {\displaystyle |u_{m\mathbf {k} }\rangle } is the cell-periodic part of the ground state Bloch wavefunction.

The topological nature of the axion coupling is evident if one considers gauge transformations. In this condensed matter setting a gauge transformation is a unitary transformation between states at the same k {\displaystyle \mathbf {k} } point

| ψ ~ n k = U m n ( k ) | ψ n k {\displaystyle |{\tilde {\psi }}_{n\mathbf {k} }\rangle =U_{mn}(\mathbf {k} )|\psi _{n\mathbf {k} }\rangle } .

Now a gauge transformation will cause θ θ + 2 π n {\displaystyle \theta \rightarrow \theta +2\pi n} , n N {\displaystyle n\in \mathbb {N} } . Since a gauge choice is arbitrary, this property tells us that θ {\displaystyle \theta } is only well defined in an interval of length 2 π {\displaystyle 2\pi } e.g. θ [ π , π ] {\displaystyle \theta \in [-\pi ,\pi ]} .

The final ingredient we need to acquire a Z 2 {\displaystyle \mathbb {Z} _{2}} classification based on the axion coupling comes from observing how crystalline symmetries act on θ {\displaystyle \theta } .

  • Fractional lattice translations τ q {\displaystyle \tau _{q}} , n-fold rotations C n {\displaystyle C_{n}} : θ θ {\displaystyle \theta \rightarrow \theta } .
  • Time-reversal T {\displaystyle T} , inversion I {\displaystyle I} : θ θ {\displaystyle \theta \rightarrow -\theta } .

The consequence is that if time-reversal or inversion are symmetries of the crystal we need to have θ = θ {\displaystyle \theta =-\theta } and that can only be true if θ = 0 {\displaystyle \theta =0} (trivial), π {\displaystyle \pi } (non-trivial) (note that π {\displaystyle -\pi } and π {\displaystyle \pi } are identified) giving us a Z 2 {\displaystyle \mathbb {Z} _{2}} classification. Furthermore, we can combine inversion or time-reversal with other symmetries that do not affect θ {\displaystyle \theta } to acquire new symmetries that quantize θ {\displaystyle \theta } . For example, mirror symmetry can always be expressed as m = I C 2 {\displaystyle m=I*C_{2}} giving rise to crystalline topological insulators,[9] while the first intrinsic magnetic topological insulator MnBi 2 {\displaystyle _{2}} Te 4 {\displaystyle _{4}} [10][11] has the quantizing symmetry S = T τ 1 / 2 {\displaystyle S=T*\tau _{1/2}} .

Surface anomalous hall conductivity

So far we have discussed the mathematical properties of the axion coupling. Physically, a non-trivial axion coupling ( θ = π {\displaystyle \theta =\pi } ) will result in a half-quantized surface anomalous Hall conductivity ( σ AHC surf = e 2 / 2 h {\displaystyle \sigma _{\text{AHC}}^{\text{surf}}=e^{2}/2h} ) if the surface states are gapped. To see this, note that in general σ AHC surf {\displaystyle \sigma _{\text{AHC}}^{\text{surf}}} has two contribution. One comes from the axion coupling θ {\displaystyle \theta } , a quantity that is determined from bulk considerations as we have seen, while the other is the Berry phase ϕ {\displaystyle \phi } of the surface states at the Fermi level and therefore depends on the surface. In summary for a given surface termination the perpendicular component of the surface anomalous Hall conductivity to the surface will be

σ AHC surf = e 2 h θ ϕ 2 π   mod   e 2 / h {\displaystyle \sigma _{\text{AHC}}^{\text{surf}}=-{\frac {e^{2}}{h}}{\frac {\theta -\phi }{2\pi }}\ {\text{mod}}\ e^{2}/h} .

The expression for σ AHC surf {\displaystyle \sigma _{\text{AHC}}^{\text{surf}}} is defined mod   e 2 / h {\displaystyle {\text{mod}}\ e^{2}/h} because a surface property ( σ AHC surf {\displaystyle \sigma _{\text{AHC}}^{\text{surf}}} ) can be determined from a bulk property ( θ {\displaystyle \theta } ) up to a quantum. To see this, consider a block of a material with some initial θ {\displaystyle \theta } which we wrap with a 2D quantum anomalous Hall insulator with Chern index C = 1 {\displaystyle C=1} . As long as we do this without closing the surface gap, we are able to increase σ AHC surf {\displaystyle \sigma _{\text{AHC}}^{\text{surf}}} by e 2 / h {\displaystyle e^{2}/h} without altering the bulk, and therefore without altering the axion coupling θ {\displaystyle \theta } .

One of the most dramatic effects occurs when θ = π {\displaystyle \theta =\pi } and time-reversal symmetry is present, i.e. non-magnetic topological insulator. Since σ AHC surf {\displaystyle {\boldsymbol {\sigma }}_{\text{AHC}}^{\text{surf}}} is a pseudovector on the surface of the crystal, it must respect the surface symmetries, and T {\displaystyle T} is one of them, but T σ AHC surf = σ AHC surf {\displaystyle T{\boldsymbol {\sigma }}_{\text{AHC}}^{\text{surf}}=-{\boldsymbol {\sigma }}_{\text{AHC}}^{\text{surf}}} resulting in σ AHC surf = 0 {\displaystyle {\boldsymbol {\sigma }}_{\text{AHC}}^{\text{surf}}=0} . This forces ϕ = π {\displaystyle \phi =\pi } on every surface resulting in a Dirac cone (or more generally an odd number of Dirac cones) on every surface and therefore making the boundary of the material conducting.

On the other hand, if time-reversal symmetry is absent, other symmetries can quantize θ = π {\displaystyle \theta =\pi } and but not force σ AHC surf {\displaystyle {\boldsymbol {\sigma }}_{\text{AHC}}^{\text{surf}}} to vanish. The most extreme case is the case of inversion symmetry (I). Inversion is never a surface symmetry and therefore a non-zero σ AHC surf {\displaystyle {\boldsymbol {\sigma }}_{\text{AHC}}^{\text{surf}}} is valid. In the case that a surface is gapped, we have ϕ = 0 {\displaystyle \phi =0} which results in a half-quantized surface AHC σ AHC surf = e 2 2 h {\displaystyle \sigma _{\text{AHC}}^{\text{surf}}=-{\frac {e^{2}}{2h}}} .

A half quantized surface Hall conductivity and a related treatment is also valid to understand topological insulators in magnetic field [12] giving an effective axion description of the electrodynamics of these materials.[13] This term leads to several interesting predictions including a quantized magnetoelectric effect.[14] Evidence for this effect has recently been given in THz spectroscopy experiments performed at the Johns Hopkins University.[15]

Experimental realizations

Magnetic topological insulators have proven difficult to create experimentally. In 2023 it was estimated that a magnetic topological insulator might be developed in 15 years' time.[16]

A compound made from manganese, bismuth, and tellurium (MnBi2Te4) has been predicted to be a magnetic topological insulator. In 2024, scientists at the University of Chicago used MnBi2Te4 to develop a form of optical memory which is switched using lasers. This memory storage device could store data more quickly and efficiently, including in quantum computing.[17]

References

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